On 08/19, Archit Taneja wrote:
The Qualcomm NAND controller is found in SoCs like IPQ806x, MSM7xx,
MDM9x15 series.
It exists as a sub block inside the IPs EBI2 (External Bus Interface 2)
and QPIC (Qualcomm Parallel Interface Controller). These IPs provide a
broader interface for external slow peripheral devices such as LCD and
NAND/NOR flash memory or SRAM like interfaces.
We add support for the NAND controller found within EBI2. For the SoCs
of our interest, we only use the NAND controller within EBI2. Therefore,
it's safe for us to assume that the NAND controller is a standalone block
within the SoC.
The controller supports 512B, 2kB, 4kB and 8kB page 8-bit and 16-bit NAND
flash devices. It contains a HW ECC block that supports BCH ECC (4, 8 and
16 bit correction/step) and RS ECC(4 bit correction/step) that covers main
and spare data. The controller contains an internal 512 byte page buffer
to which we read/write via DMA. The EBI2 type NAND controller uses ADM DMA
for register read/write and data transfers. The controller performs page
reads and writes at a codeword/step level of 512 bytes. It can support up
to 2 external chips of different configurations.
The driver prepares register read and write configuration descriptors for
each codeword, followed by data descriptors to read or write data from the
controller's internal buffer. It uses a single ADM DMA channel that we get
via dmaengine API. The controller requires 2 ADM CRCIs for command and
data flow control. These are passed via DT.
The ecc layout used by the controller is syndrome like, but we can't use
the standard syndrome ecc ops because of several reasons. First, the amount
of data bytes covered by ecc isn't same in each step. Second, writing to
free oob space requires us writing to the entire step in which the oob
lies. This forces us to create our own ecc ops.
One more difference is how the controller accesses the bad block marker.
The controller ignores reading the marker when ECC is enabled. ECC needs
to be explicity disabled to read or write to the bad block marker. For
this reason, we use the newly created flag NAND_BBT_ACCESS_BBM_RAW to
read the factory provided bad block markers.
v4:
- Shrink submit_descs
- add desc list node at the end of dma_prep_desc
- Endianness and warning fixes
Signed-off-by: Stephen Boyd <sboyd@xxxxxxxxxxxxxx>
v3:
- Refactor dma functions for maximum reuse
- Use dma_slave_confing on stack
- optimize and clean upempty_page_fixup using memchr_inv
- ensure portability with dma register reads using le32_* funcs
- use NAND_USE_BOUNCE_BUFFER instead of doing it ourselves
- fix handling of return values of dmaengine funcs
- constify wherever possible
- Remove dependency on ADM DMA in Kconfig
- Misc fixes and clean ups
v2:
- Use new BBT flag that allows us to read BBM in raw mode
- reduce memcpy-s in the driver
- some refactor and clean ups because of above changes
Reviewed-by: Andy Gross <agross@xxxxxxxxxxxxxx>
Signed-off-by: Archit Taneja <architt@xxxxxxxxxxxxxx>
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Reviewed-by: Stephen Boyd <sboyd@xxxxxxxxxxxxxx>