[PATCH v2 19/19] EDAC/synopsys: Convert to using BIT/GENMASK/FIELD_x macros

From: Serge Semin
Date: Sat Sep 10 2022 - 15:45:17 EST

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Instead of using the very handy helpers denoted in the subject the driver
has been created with the open-coded {mask,shift} statements. It makes the
code bulky, prone to mistakes and much harder to read. Seeing there are
many places in the driver implementing the CSR fields get/set pattern
let's use the FIELD_GET()/FIELD_PREP() macros introduced in the kernel
specifically for that case. In addition we suggest to use the BIT() and
GENMASK() macros to generate the CSR flags/masks. While at it unify the
row, column, rank, bank and bank group macros names to be looking in the
same way as the fields of the snps_ecc_error_info structure.

Signed-off-by: Serge Semin <Sergey.Semin@xxxxxxxxxxxxxxxxxxxx>
---
drivers/edac/synopsys_edac.c | 123 +++++++++++++++++------------------
1 file changed, 60 insertions(+), 63 deletions(-)

diff --git a/drivers/edac/synopsys_edac.c b/drivers/edac/synopsys_edac.c
index 49bb28af448b..7833bcff3e2e 100644
--- a/drivers/edac/synopsys_edac.c
+++ b/drivers/edac/synopsys_edac.c
@@ -7,6 +7,7 @@
*/

#include <linux/bitfield.h>
+#include <linux/bits.h>
#include <linux/edac.h>
#include <linux/module.h>
#include <linux/platform_device.h>
@@ -91,22 +92,19 @@
#define DDR_MSTR_DEV_X8 0x1
#define DDR_MSTR_DEV_X16 0x2
#define DDR_MSTR_DEV_X32 0x3
-#define DDR_MSTR_BUSWIDTH_MASK 0x3000
-#define DDR_MSTR_BUSWIDTH_SHIFT 12
+#define DDR_MSTR_BUSWIDTH_MASK GENMASK(13, 12)
#define DDRCTL_EWDTH_16 2
#define DDRCTL_EWDTH_32 1
#define DDRCTL_EWDTH_64 0

/* ECC CFG0 register definitions */
-#define ECC_CFG0_MODE_MASK 0x7
+#define ECC_CFG0_MODE_MASK GENMASK(2, 0)
#define ECC_CFG0_MODE_SECDED 0x4

/* ECC status register definitions */
-#define ECC_STAT_UECNT_MASK 0xF0000
-#define ECC_STAT_UECNT_SHIFT 16
-#define ECC_STAT_CECNT_MASK 0xF00
-#define ECC_STAT_CECNT_SHIFT 8
-#define ECC_STAT_BITNUM_MASK 0x7F
+#define ECC_STAT_UE_MASK GENMASK(23, 16)
+#define ECC_STAT_CE_MASK GENMASK(15, 8)
+#define ECC_STAT_BITNUM_MASK GENMASK(6, 0)

/* ECC control/clear register definitions */
#define ECC_CTRL_CLR_CE_ERR BIT(0)
@@ -117,49 +115,41 @@
#define ECC_CTRL_EN_UE_IRQ BIT(9)

/* ECC error count register definitions */
-#define ECC_ERRCNT_UECNT_MASK 0xFFFF0000
-#define ECC_ERRCNT_UECNT_SHIFT 16
-#define ECC_ERRCNT_CECNT_MASK 0xFFFF
+#define ECC_ERRCNT_UECNT_MASK GENMASK(31, 16)
+#define ECC_ERRCNT_CECNT_MASK GENMASK(15, 0)

/* DDR QOS Interrupt register definitions */
#define DDR_QOS_IRQ_STAT_OFST 0x20200
-#define DDR_QOSUE_MASK 0x4
-#define DDR_QOSCE_MASK 0x2
-#define ECC_CE_UE_INTR_MASK 0x6
+#define DDR_QOSUE_MASK BIT(2)
+#define DDR_QOSCE_MASK BIT(1)
+#define ECC_CE_UE_INTR_MASK (DDR_QOSUE_MASK | DDR_QOSCE_MASK)
#define DDR_QOS_IRQ_EN_OFST 0x20208
#define DDR_QOS_IRQ_DB_OFST 0x2020C

/* ECC Corrected Error Register Mask and Shifts*/
-#define ECC_CEADDR0_RW_MASK 0x3FFFF
-#define ECC_CEADDR0_RNK_MASK BIT(24)
-#define ECC_CEADDR1_BNKGRP_MASK 0x3000000
-#define ECC_CEADDR1_BNKNR_MASK 0x70000
-#define ECC_CEADDR1_COL_MASK 0xFFF
-#define ECC_CEADDR1_BNKGRP_SHIFT 24
-#define ECC_CEADDR1_BNKNR_SHIFT 16
+#define ECC_CEADDR0_RANK_MASK GENMASK(27, 24)
+#define ECC_CEADDR0_ROW_MASK GENMASK(17, 0)
+#define ECC_CEADDR1_BANKGRP_MASK GENMASK(25, 24)
+#define ECC_CEADDR1_BANK_MASK GENMASK(23, 16)
+#define ECC_CEADDR1_COL_MASK GENMASK(11, 0)

/* ECC Poison register shifts */
-#define ECC_POISON0_RANK_SHIFT 24
-#define ECC_POISON0_RANK_MASK BIT(24)
-#define ECC_POISON0_COLUMN_SHIFT 0
-#define ECC_POISON0_COLUMN_MASK 0xFFF
-#define ECC_POISON1_BG_SHIFT 28
-#define ECC_POISON1_BG_MASK 0x30000000
-#define ECC_POISON1_BANKNR_SHIFT 24
-#define ECC_POISON1_BANKNR_MASK 0x7000000
-#define ECC_POISON1_ROW_SHIFT 0
-#define ECC_POISON1_ROW_MASK 0x3FFFF
+#define ECC_POISON0_RANK_MASK GENMASK(27, 24)
+#define ECC_POISON0_COL_MASK GENMASK(11, 0)
+#define ECC_POISON1_BANKGRP_MASK GENMASK(29, 28)
+#define ECC_POISON1_BANK_MASK GENMASK(26, 24)
+#define ECC_POISON1_ROW_MASK GENMASK(17, 0)

/* DDR Memory type defines */
-#define MEM_TYPE_DDR3 0x1
-#define MEM_TYPE_LPDDR3 0x8
-#define MEM_TYPE_DDR2 0x4
-#define MEM_TYPE_DDR4 0x10
-#define MEM_TYPE_LPDDR4 0x20
+#define MEM_TYPE_DDR3 BIT(0)
+#define MEM_TYPE_DDR2 BIT(2)
+#define MEM_TYPE_LPDDR3 BIT(3)
+#define MEM_TYPE_DDR4 BIT(4)
+#define MEM_TYPE_LPDDR4 BIT(5)

/* DDRC ECC CE & UE poison mask */
-#define ECC_CEPOISON_MASK 0x3
-#define ECC_UEPOISON_MASK 0x1
+#define ECC_CEPOISON_MASK GENMASK(1, 0)
+#define ECC_UEPOISON_MASK BIT(0)

/* DDRC Device config shifts/masks */
#define DDR_MAX_ROW_SHIFT 18
@@ -304,38 +294,40 @@ static int snps_get_error_info(struct snps_edac_priv *priv)
if (!regval)
return 1;

- p->ceinfo.bitpos = (regval & ECC_STAT_BITNUM_MASK);
+ p->ceinfo.bitpos = FIELD_GET(ECC_STAT_BITNUM_MASK, regval);

regval = readl(base + ECC_ERRCNT_OFST);
- p->ce_cnt = regval & ECC_ERRCNT_CECNT_MASK;
- p->ue_cnt = (regval & ECC_ERRCNT_UECNT_MASK) >> ECC_ERRCNT_UECNT_SHIFT;
+ p->ce_cnt = FIELD_GET(ECC_ERRCNT_CECNT_MASK, regval);
+ p->ue_cnt = FIELD_GET(ECC_ERRCNT_UECNT_MASK, regval);
if (!p->ce_cnt)
goto ue_err;

regval = readl(base + ECC_CEADDR0_OFST);
- p->ceinfo.row = (regval & ECC_CEADDR0_RW_MASK);
+ p->ceinfo.row = FIELD_GET(ECC_CEADDR0_ROW_MASK, regval);
+
regval = readl(base + ECC_CEADDR1_OFST);
- p->ceinfo.bank = (regval & ECC_CEADDR1_BNKNR_MASK) >>
- ECC_CEADDR1_BNKNR_SHIFT;
- p->ceinfo.bankgrp = (regval & ECC_CEADDR1_BNKGRP_MASK) >>
- ECC_CEADDR1_BNKGRP_SHIFT;
- p->ceinfo.col = (regval & ECC_CEADDR1_COL_MASK);
+ p->ceinfo.bank = FIELD_GET(ECC_CEADDR1_BANK_MASK, regval);
+ p->ceinfo.bankgrp = FIELD_GET(ECC_CEADDR1_BANKGRP_MASK, regval);
+ p->ceinfo.col = FIELD_GET(ECC_CEADDR1_COL_MASK, regval);
+
p->ceinfo.data = readl(base + ECC_CSYND0_OFST);
+
edac_dbg(2, "ECCCSYN0: 0x%08X ECCCSYN1: 0x%08X ECCCSYN2: 0x%08X\n",
readl(base + ECC_CSYND0_OFST), readl(base + ECC_CSYND1_OFST),
readl(base + ECC_CSYND2_OFST));
+
ue_err:
if (!p->ue_cnt)
goto out;

regval = readl(base + ECC_UEADDR0_OFST);
- p->ueinfo.row = (regval & ECC_CEADDR0_RW_MASK);
+ p->ueinfo.row = FIELD_GET(ECC_CEADDR0_ROW_MASK, regval);
+
regval = readl(base + ECC_UEADDR1_OFST);
- p->ueinfo.bankgrp = (regval & ECC_CEADDR1_BNKGRP_MASK) >>
- ECC_CEADDR1_BNKGRP_SHIFT;
- p->ueinfo.bank = (regval & ECC_CEADDR1_BNKNR_MASK) >>
- ECC_CEADDR1_BNKNR_SHIFT;
- p->ueinfo.col = (regval & ECC_CEADDR1_COL_MASK);
+ p->ueinfo.bankgrp = FIELD_GET(ECC_CEADDR1_BANKGRP_MASK, regval);
+ p->ueinfo.bank = FIELD_GET(ECC_CEADDR1_BANK_MASK, regval);
+ p->ueinfo.col = FIELD_GET(ECC_CEADDR1_COL_MASK, regval);
+
p->ueinfo.data = readl(base + ECC_UESYND0_OFST);

out:
@@ -510,7 +502,8 @@ static bool snps_get_ecc_state(void __iomem *base)
{
u32 regval;

- regval = readl(base + ECC_CFG0_OFST) & ECC_CFG0_MODE_MASK;
+ regval = readl(base + ECC_CFG0_OFST);
+ regval = FIELD_GET(ECC_CFG0_MODE_MASK, regval);

return (regval == ECC_CFG0_MODE_SECDED);
}
@@ -697,13 +690,13 @@ static void snps_data_poison_setup(struct snps_edac_priv *priv)
if (priv->rank_shift[0])
rank = (hif_addr >> priv->rank_shift[0]) & BIT(0);

- regval = (rank << ECC_POISON0_RANK_SHIFT) & ECC_POISON0_RANK_MASK;
- regval |= (col << ECC_POISON0_COLUMN_SHIFT) & ECC_POISON0_COLUMN_MASK;
+ regval = FIELD_PREP(ECC_POISON0_RANK_MASK, rank) |
+ FIELD_PREP(ECC_POISON0_COL_MASK, col);
writel(regval, priv->baseaddr + ECC_POISON0_OFST);

- regval = (bankgrp << ECC_POISON1_BG_SHIFT) & ECC_POISON1_BG_MASK;
- regval |= (bank << ECC_POISON1_BANKNR_SHIFT) & ECC_POISON1_BANKNR_MASK;
- regval |= (row << ECC_POISON1_ROW_SHIFT) & ECC_POISON1_ROW_MASK;
+ regval = FIELD_PREP(ECC_POISON1_BANKGRP_MASK, bankgrp) |
+ FIELD_PREP(ECC_POISON1_BANK_MASK, bank) |
+ FIELD_PREP(ECC_POISON1_ROW_MASK, row);
writel(regval, priv->baseaddr + ECC_POISON1_OFST);
}

@@ -742,10 +735,14 @@ static ssize_t inject_data_poison_show(struct device *dev,
{
struct mem_ctl_info *mci = to_mci(dev);
struct snps_edac_priv *priv = mci->pvt_info;
+ const char *errstr;
+ u32 regval;
+
+ regval = readl(priv->baseaddr + ECC_CFG1_OFST);
+ errstr = FIELD_GET(ECC_CEPOISON_MASK, regval) == ECC_CEPOISON_MASK ?
+ "Correctable Error" : "UnCorrectable Error";

- return sprintf(data, "Data Poisoning: %s\n\r",
- (((readl(priv->baseaddr + ECC_CFG1_OFST)) & 0x3) == 0x3)
- ? ("Correctable Error") : ("UnCorrectable Error"));
+ return sprintf(data, "Data Poisoning: %s\n\r", errstr);
}

static ssize_t inject_data_poison_store(struct device *dev,
@@ -852,7 +849,7 @@ static void snps_setup_column_address_map(struct snps_edac_priv *priv, u32 *addr
int index;

memtype = readl(priv->baseaddr + DDR_MSTR_OFST);
- width = (memtype & DDR_MSTR_BUSWIDTH_MASK) >> DDR_MSTR_BUSWIDTH_SHIFT;
+ width = FIELD_GET(DDR_MSTR_BUSWIDTH_MASK, memtype);

priv->col_shift[0] = 0;
priv->col_shift[1] = 1;
--
2.37.2

Next message: Al Viro: "Re: [man-pages RFC PATCH v4] statx, inode: document the new STATX_INO_VERSION field"
Previous message: Serge Semin: "[PATCH v2 18/19] EDAC/synopsys: Unify the driver entities naming"
In reply to: Serge Semin: "[PATCH v2 18/19] EDAC/synopsys: Unify the driver entities naming"
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