Re: [PATCH v8 00/29] Rework the trip points creation
From: Marek Szyprowski
Date: Wed Oct 05 2022 - 09:05:57 EST
On 05.10.2022 14:37, Daniel Lezcano wrote:
>
> Hi Marek,
>
> On 03/10/2022 23:18, Daniel Lezcano wrote:
>
> [ ... ]
>
>>> I've tested this v8 patchset after fixing the issue with Exynos TMU
>>> with
>>> https://lore.kernel.org/all/20221003132943.1383065-1-daniel.lezcano@xxxxxxxxxx/
>>>
>>> patch and I got the following lockdep warning on all Exynos-based
>>> boards:
>>>
>>>
>>> ======================================================
>>> WARNING: possible circular locking dependency detected
>>> 6.0.0-rc1-00083-ge5c9d117223e #12945 Not tainted
>>> ------------------------------------------------------
>>> swapper/0/1 is trying to acquire lock:
>>> c1ce66b0 (&data->lock#2){+.+.}-{3:3}, at: exynos_get_temp+0x3c/0xc8
>>>
>>> but task is already holding lock:
>>> c2979b94 (&tz->lock){+.+.}-{3:3}, at:
>>> thermal_zone_device_update.part.0+0x3c/0x528
>>>
>>> which lock already depends on the new lock.
>>
>> I'm wondering if the problem is not already there and related to
>> data->lock ...
>>
>> Doesn't the thermal zone lock already prevent racy access to the data
>> structure?
>>
>> Another question: if the sensor clock is disabled after reading it,
>> how does the hardware update the temperature and detect the programed
>> threshold is crossed?
>
> just a gentle ping, as the fix will depend on your answer ;)
>
Sorry, I've been busy with other stuff. I thought I will fix this once I
find a bit of spare time.
IMHO the clock management is a bit over-engineered, as there is little
(if any) benefit from such fine grade clock management. That clock is
needed only for the AHB related part of the TMU (reading/writing the
registers). The IRQ generation and temperature measurement is clocked
from so called 'sclk' (special clock).
I also briefly looked at the code and the internal lock doesn't look to
be really necessary assuming that the thermal core already serializes
all the calls.
Best regards
--
Marek Szyprowski, PhD
Samsung R&D Institute Poland